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www.irf.com 1 08/02/11 IRLR8256PBF irlu8256pbf hexfet power mosfet notes through are on page 11 applications
d-pak IRLR8256PBF i-pak irlu8256pbf gds gate drain source high frequency synchronous buck converters for computer processor power high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use
benefits very low rds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current lead-free rohs compliant v dss r ds(on) max qg 25v 5.7m 10nc absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation p d @t c = 100c maximum power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.4 r ja junction-to-ambient (pcb mount) ??? 50 r ja junction-to-ambient ??? 110 v c c/w w a 0.42 31 300 (1.6mm from case) -55 to + 175 63 max. 81 57 325 20 25

2 www.irf.com static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 25 ??? ??? v ? / . 1 / . . . . 1. 1. . / . / 1.0 10 100 100 1 10 1 1 . 1. . . . 1 .1 .0 . . t d(on) turn-on delay time ??? 9.7 ??? t r rise time ??? 46 ??? t d(off) turn-off delay time ??? 12 ??? t f fall time ??? 8.5 ??? c iss input capacitance ??? 1470 ??? c oss output capacitance ??? 453 ??? c rss reverse transfer capacitance ??? 185 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 19 29 ns q rr reverse recovery charge ??? 17 26 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) mosfet symbol ??? v gs = 4.5v typ. ??? ??? i d = 20a v gs = 0v v ds = 13v t j = 25c, i f = 20a, v dd = 13v di/dt = 250a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. v ds = 16v, v gs = 0v v dd = 13v, v gs = 4.5v v ds = v gs , i d = 25 a r g = 1.8 1 0 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 25a v gs = 4.5v, i d = 20a v gs = 20v v gs = -20v v ds = 13v, i d = 20a v ds = 20v, v gs = 0v v ds = 20v, v gs = 0v, t j = 125c conditions 6.3 see fig. 14 max. 86 20 ? = 1.0mhz m 81 325 a na ns pf a ??? ??? ??? ??? i gss r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v bottom 2.5v 60 s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60 s pulse width tj = 175c vgs top 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v bottom 2.5v 1 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 25a v gs = 10v

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 012345678910111213 q g , total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 20a 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100 sec 1msec 10msec

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 70 80 90 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.04252 0.000007 0.57953 0.000109 1.17480 0.001003 0.60472 0.005976

6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 % + - fig 14a. switching time test circuit fig 14b. switching time waveforms 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.57a 8.50a bottom 20a

www.irf.com 7 fig 15. for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

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int ernational assembled on ww 16, 2001 in the assembly line "a" or note: "p" in assembly line position example: lot code 1234 t his is an irfr120 wi t h as s e mb l y i ndicates "l ead-f r ee" product (optional) p = designates lead-free a = as s e mb l y s i t e code part number week 16 dat e code year 1 = 2001 rectifier internat ional logo lot code as s e mb l y 34 12 irf r120 116a line a 34 rectifier logo irf r120 12 as s e mb l y lot code year 1 = 2001 dat e code part number we e k 16 "p" in as s embly line pos ition indicates "l ead-f r ee" qual ificati on to the cons umer -l evel p = designates lead-free product qualified to t he consumer level (optional) note: for the most current drawing please refer to ir website at http://www.irf.com/package/

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78 line a logo int ernational rectifier or product (optional) p = d e s i gn at e s l e ad- f r e e a = assembly site code irfu120 part number we e k 1 9 dat e code ye ar 1 = 2001 rect if ier international logo assembly lot code irfu120 56 dat e code part number lot code assembly 56 78 year 1 = 2001 week 19 119a i ndi cates l ead-f r ee" as s embled on ww 19, 2001 in the assembly line "a" note: "p" in as s embly line pos ition example: wit h as s e mb l y t his is an irf u120 lot code 5678 note: for the most current drawing please refer to ir website at http://www.irf.com/package/

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch note: for the most current drawing please refer to ir website at http://www.irf.com/package/

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repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.43 mh, r g = 25 , i as = 20a. pulse width 400 s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 50a. when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.

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!"# data and specifications subject to change without notice. ir world headquarters: 101n.sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-790 visit us at www.irf.com for sales contact information.08/2011 note form quantity IRLR8256PBF d-pak tube/bulk 75 irlr8256trpbf d-pak tape and reel 2000 IRLR8256PBF i-pak tube/bulk 75 orderable part number package type standard pack ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release. msl 1 (per jedec j-std-020d ??? ) i-pak not applicable rohs compliant yes comments: this family of products has passed jedec?s industrial qualification. ir?s consumer qualification level is granted by extension of the higher industrial level. moisture sensitivity level d-pak qualification information ? qualification level industrial ?? (per jedec jesd47f ??? guidelines)

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